Long wavelength MEMS tunable VCSEL with InP-InAlGaAs bottom DBR

Author

Boucart, Julien ; Pathak, Rajiv ; Zhang, Dongxu ; Beaudoin, Mario ; Kner, Peter ; Sun, Decai ; Stone, Robert J. ; Nabiev, Rashit F. ; Yuen, Wupen

Author_Institution

Bandwidth9, Fremont, CA, USA

Volume

15

Issue

9

fYear

2003

Firstpage

1186

Lastpage

1188

Abstract

In this letter, we present the first demonstration of a long wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) using an InP-InAlGaAs distributed Bragg reflector (DBR). The use of such a DBR improves the thermal resistance of the VCSEL while keeping the growth process simple. The devices show operation to temperatures greater than 75/spl deg/C, and single-mode devices emit powers as high as 0.9 mW at room temperature. The tuning range is as high as 17 nm.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; laser tuning; micro-optics; micromechanical devices; quantum well lasers; surface emitting lasers; 0.9 mW; 75 degC; InAlGaAs; InP-InAlGaAs; InP-InAlGaAs bottom DBR; InP-InAlGaAs distributed Bragg reflector; growth process; long wavelength MEMS tunable VCSEL; long wavelength-tunable vertical-cavity surface-emitting laser; single-mode devices; thermal resistance; tuning range; Distributed Bragg reflectors; Laser tuning; Micromechanical devices; Surface emitting lasers; Surface resistance; Surface waves; Temperature; Thermal resistance; Tunable circuits and devices; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.816673

Filename

1224574