• DocumentCode
    771457
  • Title

    Iron-Oxygen Based Perpendicular Anisotropy Thin Films (Part 1)

  • Author

    Akutsu, N. ; Akimitsu, M. ; Mizoguchi, T.

  • Author_Institution
    Research Development Corporation of Japan
  • Volume
    2
  • Issue
    11
  • fYear
    1987
  • Firstpage
    1001
  • Lastpage
    1002
  • Abstract
    The magnetostatic properties of sputtered FexO100-x films with Si or Co added are reported. Si or Co acts to extend the range of perpendicular magnetization to regions of higher magnetization. In the FexO100-x system, a point of zero magnetization exists near x = 49%; this is abruptly shifted to lower Fe concentrations with the addition of Si. The observed dependence of magnetization on composition agrees with calculations which assume that silicon combines to form SiO2 and the remaining oxygen forms FeO.
  • Keywords
    Anisotropic magnetoresistance; Iron; Magnetic anisotropy; Magnetic films; Magnetic properties; Magnetization; Magnetostatics; Perpendicular magnetic anisotropy; Sputtering; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1987.4549664
  • Filename
    4549664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771457