Iron-Oxygen Based Perpendicular Anisotropy Thin Films (Part 1)

The magnetostatic properties of sputtered FexO100-x films with Si or Co added are reported. Si or Co acts to extend the range of perpendicular magnetization to regions of higher magnetization. In the FexO100-x system, a point of zero magnetization exists near x = 49%; this is abruptly shifted to lower Fe concentrations with the addition of Si. The observed dependence of magnetization on composition agrees with calculations which assume that silicon combines to form SiO2 and the remaining oxygen forms FeO.