Title :
Output beam characteristics of 1.3 μm GaInAsP/InP SL-QW lasers with narrow and circular output beam
Author :
Kasukawa, A. ; Iwai, N. ; Yamanaka, N. ; Yokouchi, N.
Author_Institution :
Res. & Dev. Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
3/30/1995 12:00:00 AM
Abstract :
It is verified that the output beam for lasers with a mode-field converter is quite stable against output power up to 30 mW and operating temperature up to 70°C. The threshold current and differential quantum efficiency of an HR-coated device are 14 mA and 45%, respectively. The FWHMs of the FFPs parallel and perpendicular to the junction plane are as small as 10 and 11°, respectively
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser stability; quantum well lasers; 1.3 mum; 14 mA; 30 mW; 45 percent; 70 degC; FWHMs; GaInAsP-InP; HR-coated device; SL-QW lasers; circular output beam; differential quantum efficiency; junction plane; mode-field converter; operating temperature; output beam characteristics; output power; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950382
