Perpendicular Magnetization of Sputtered CoNx Film

The effects of a substrate bias voltage Vs applied during reactive sputtering of CoNx films, and of the N2 partial pressure fraction r, on the perpendicular magnetization properties of the films were investigated. Appropriate choice of r and Vs enable fabrication of perpendicular magnetization films (Hk¿ ≫ 4¿Ms); and the higher the input power and smaller the substrate-target distance, the gentler the changes in film magnetic properties with r and Vs.