DocumentCode :
771537
Title :
GaInAsP/AlGaInP-based near-IR (780 nm) vertical-cavity surface-emitting lasers
Author :
Schneider, R.P., Jr. ; Hagerott-Crawford, M.
Author_Institution :
Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
31
Issue :
7
fYear :
1995
fDate :
3/30/1995 12:00:00 AM
Firstpage :
554
Lastpage :
556
Abstract :
Near-infra-red (760-780 nm) vertical-cavity surface-emitting laser (VCSEL) diodes with GaInAsP-based active-region heterostructures are demonstrated for the first time. The devices consist of GaInAsP/GaInP/AlGaInP-based quantum-well active regions and AlAs/Al0.25Ga0.75As distributed Bragg reflectors. Different-sized devices emitting in the 760-780 nm-wavelength range exhibit threshold currents in the 3-10 mA range, threshold voltages of 2.1 V and peak power output >4 mW
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; surface emitting lasers; 2.1 V; 3 to 10 mA; 4 mW; 760 to 780 nm; GaInAsP-AlGaInP; active-region heterostructures; distributed Bragg reflectors; near-IR lasers; peak power output; quantum-well active regions; threshold currents; threshold voltages; vertical-cavity surface-emitting lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950397
Filename :
381802
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=771537
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