Radiation Studies on GaAs and Si Devices

GaAs and Si n/p cells were irradiated with 100 kev and 17.6 Mev protons, and 0.8 and 5.6 Mev electrons. The resulting difference in performance is interpreted in terms of the initial lifetime and the photo-absorption process. It is concluded that GaAs cells can deliver a given power longer than Si cells in a radiation field of high-energy protons and electrons. Thin shields will be required for both cells in environments of low-energy protons. It is suggested that the recombination centers introduced in silicon by high-energy particles are more effective than those introduced by 0.8 Mev electrons.