Title :
Specific contact resistivity of InGaAs/InP p-isotype heterojunctions
Author :
Bowers, John E. ; Hafich, M.J. ; Silvestre, P. ; Woods, L.M. ; Robinson, G.Y.
Abstract :
The specific contact resistivity of lattice matched InGaAs/InP p-isotype heterojunction has been measured through the use of an interface transmission line model structure. The measured resistance values are comparable to or greater than those of the metal/semiconductor interface and depend heavily on the doping and the abrupt or graded nature of the interface.
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; indium compounds; ohmic contacts; semiconductor junctions; InGaAs-InP; doping; graded interface; hole transport; interface transmission line model structure; low resistance ohmic contacts; p-isotype heterojunctions; specific contact resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920998
