• DocumentCode
    77188
  • Title

    Study and Handling Methods of Power IGBT Module Failures in Power Electronic Converter Systems

  • Author

    Ui-Min Choi ; Blaabjerg, Frede ; Kyo-Beum Lee

  • Author_Institution
    Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
  • Volume
    30
  • Issue
    5
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    2517
  • Lastpage
    2533
  • Abstract
    Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open- and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.
  • Keywords
    failure analysis; fault diagnosis; fault tolerance; insulated gate bipolar transistors; power bipolar transistors; power convertors; power system faults; power system reliability; short-circuit currents; fault tolerant strategy; insulated gate bipolar transistor; junction temperature estimation; lifetime prediction; open-circuit fault delection; power IGBT module failure handling method; power electronic converter system; power electronic system reliability improvement; short-circuit fault detection; Electronic packaging thermal management; Failure analysis; Insulated gate bipolar transistors; Reliability; Silicon; Soldering; Fault detection; fault tolerant; insulated-gate bipolar transistor (IGBT) modules; physics-of-failure (PoF); power electronics; reliability;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2014.2373390
  • Filename
    6975203