Possible Mechanism of Mode Change to Vertical Magnetization from In-Plane Magnetization in TbCo Layered Structure

Formulas are presented for calculating the energy of an antiferromagnetic body to clarify the mechanism of change from vertical to in-plane magnetization in TbCo layered films. The formulas are based on the assumptions that the bias current used in forming the layered film includes short-period pulsation current, resulting in the formation of an amorphous-state epitaxial natural lattice; and that each of the layers of the TbCo film consists of two-dimensional lattices.