Title :
Elimination of photoinduced absorption in Ge-doped silica fibres by annealing of ultraviolet colour centres
Author :
Malo, B. ; Albert, J. ; Johnson, D.C. ; Bilodeau, F. ; Hill, K.O.
Author_Institution :
Commun. Res. Center, Ottawa, Ont., Canada
Abstract :
Heating standard telecommunication Ge-doped silica fibres to 1200 degrees C removes the ultraviolet absorption bands believed to be responsible for photosensitivity. Losses at 480 nm induced by exposure to 249 nm laser light are reduced from 30 dB/m to less than 0.8 dB/m in the annealed fibre.
Keywords :
annealing; colour centres; germanium; impurity and defect absorption spectra of inorganic solids; optical fibres; optical losses; silicon compounds; ultraviolet spectra of inorganic solids; visible spectra of inorganic solids; 1200 degC; 249 nm; 30 to 0.8 dB; 480 nm; Ge-doped silica fibres; SiO 2:Ge; annealing; heating; losses; photoinduced absorption elimination; photosensitivity; ultraviolet absorption bands; ultraviolet colour centres;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921017
