Title :
True-CW operation of GaAs bistable etalon with electronic optical nonlinearity
Author :
Goodwill, D.J. ; Walker, A.C. ; Kean, A.H. ; Stanley, C.R.
Author_Institution :
Heriot Watt Univ., Edinburgh, UK
Abstract :
An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 mu W.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light interferometers; optical bistability; 40 ns; 700 muW; GaAs-GaAlAs; III-V semiconductor; all epitaxial structure; band-edge resonant electronic nonlinearity; critical switch power; electronic optical nonlinearity; optically bistable Fabry-Perot etalon; switch times; thermal effects; true CW operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921018
