• DocumentCode
    771967
  • Title

    True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

  • Author

    Goodwill, D.J. ; Walker, A.C. ; Kean, A.H. ; Stanley, C.R.

  • Author_Institution
    Heriot Watt Univ., Edinburgh, UK
  • Volume
    28
  • Issue
    17
  • fYear
    1992
  • Firstpage
    1599
  • Lastpage
    1601
  • Abstract
    An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 mu W.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; light interferometers; optical bistability; 40 ns; 700 muW; GaAs-GaAlAs; III-V semiconductor; all epitaxial structure; band-edge resonant electronic nonlinearity; critical switch power; electronic optical nonlinearity; optically bistable Fabry-Perot etalon; switch times; thermal effects; true CW operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921018
  • Filename
    156276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771967