DocumentCode :
771967
Title :
True-CW operation of GaAs bistable etalon with electronic optical nonlinearity
Author :
Goodwill, D.J. ; Walker, A.C. ; Kean, A.H. ; Stanley, C.R.
Author_Institution :
Heriot Watt Univ., Edinburgh, UK
Volume :
28
Issue :
17
fYear :
1992
Firstpage :
1599
Lastpage :
1601
Abstract :
An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 mu W.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light interferometers; optical bistability; 40 ns; 700 muW; GaAs-GaAlAs; III-V semiconductor; all epitaxial structure; band-edge resonant electronic nonlinearity; critical switch power; electronic optical nonlinearity; optically bistable Fabry-Perot etalon; switch times; thermal effects; true CW operation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921018
Filename :
156276
Link To Document :
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