DocumentCode :
772057
Title :
Phase matched AlGaAs/GaAs complementary HBTs for push-pull operation
Author :
Enquist, P.M. ; Hutchby, A. ; Morris, A.S. ; Trew, R.J.
Volume :
28
Issue :
17
fYear :
1992
Firstpage :
1615
Lastpage :
1616
Abstract :
Nearly ideal push-pull phase performance has been demonstrated using monolithically integrated AlGaAs/GaAs complementary HBTs. The maximum relative phase difference between the devices at a 5 GHz fundamental was 7 and 10 degrees at the 10 GHz second harmonic. When compared to single-ended N pn performance the push-pull pairs exhibited lower second and fourth harmonic content while the fundamental and third harmonic levels were simultaneously reinforced. The phase coherence was stable over a large range of base-collector reverse bias and collector current.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; 5 to 10 GHz; AlGaAs-GaAs; base-collector reverse bias; collector current; fourth harmonic; maximum relative phase difference; monolithic integration; phase coherence; phase matched complementary HBTs; push-pull phase performance; second harmonic; third harmonic;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19921027
Filename :
156285
Link To Document :
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