• DocumentCode
    772057
  • Title

    Phase matched AlGaAs/GaAs complementary HBTs for push-pull operation

  • Author

    Enquist, P.M. ; Hutchby, A. ; Morris, A.S. ; Trew, R.J.

  • Volume
    28
  • Issue
    17
  • fYear
    1992
  • Firstpage
    1615
  • Lastpage
    1616
  • Abstract
    Nearly ideal push-pull phase performance has been demonstrated using monolithically integrated AlGaAs/GaAs complementary HBTs. The maximum relative phase difference between the devices at a 5 GHz fundamental was 7 and 10 degrees at the 10 GHz second harmonic. When compared to single-ended N pn performance the push-pull pairs exhibited lower second and fourth harmonic content while the fundamental and third harmonic levels were simultaneously reinforced. The phase coherence was stable over a large range of base-collector reverse bias and collector current.
  • Keywords
    III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; 5 to 10 GHz; AlGaAs-GaAs; base-collector reverse bias; collector current; fourth harmonic; maximum relative phase difference; monolithic integration; phase coherence; phase matched complementary HBTs; push-pull phase performance; second harmonic; third harmonic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921027
  • Filename
    156285