DocumentCode :
772104
Title :
An 8-bit 800- 
1.23-MS/s Successive Approximation ADC in SOI CMOS
1.23-MS/s Successive Approximation ADC in SOI CMOSAuthor :
Culurciello, Eugenio ; Andreou, Andreas G.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT
Volume :
53
Issue :
9
fYear :
2006
Firstpage :
858
Lastpage :
861
Abstract :
We report on an 8-bit successive approximation analog-to-digital converter (SA-ADC) that was designed and fabricated in 0.5-mum silicon on sapphire CMOS technology. The SA-ADC is capable of 32-MHz operation, providing 1.23-MS/s conversion rates, and consumes 800 muW at 3.3-V supply. The lack of substrate parasitic capacitances enables the use of small-area capacitors and reduces the noise coupling to the analog nodes. The circuits employ MOS transistors of different thresholds to optimize the performance and power dissipation of the system
Keywords :
CMOS digital integrated circuits; aluminium compounds; analogue-digital conversion; sapphire; silicon; silicon-on-insulator; 0.5 micron; 3.3 V; 32 MHz; 8 bit; 800 muW; MOS transistors; SOI CMOS; Si-Al2O3; analog-to-digital converter; power dissipation; silicon-on-insulator; successive approximation; Analog-digital conversion; CMOS technology; Circuit noise; Coupling circuits; MOS capacitors; MOSFETs; Noise reduction; Parasitic capacitance; Power dissipation; Silicon; Analog-to-digital converters (ADCs); low power; low voltage; silicon-on-insulator (SOI); silicon-on-sapphire (SOS); successive approximation (SA);
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2006.880021
Filename :
1705054
Link To Document :
