Al $_{\\bf 0.52}$ In $_{\\bf 0.48}$ P SAM-APD as a Blue-Green Detector

Author

Jeng Shiuh Cheong ; Ong, J.S.L. ; Jo Shien Ng ; Krysa, A.B. ; David, J.P.R.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

Volume

20

Issue

6

fYear

2014

fDate

Nov.-Dec. 2014

Firstpage

142

Lastpage

146

Abstract

We demonstrate an Al_0.52In_0.48 P homo-junction Separate Absorption Multiplication Avalanche Photodiode as a detector with narrow spectral response in the blue-green part of the optical spectrum. Due to its wide band-gap, this device has a dark current density of <; 8 nA cm^-2 at 99.9% of the breakdown voltage at room temperature. This device has a peak responsivity at 483 nm of 0.15 A/W when punched-through and is capable of an avalanche gain higher than 100.

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; photodetectors; semiconductor junctions; wide band gap semiconductors; Al_0.52In_0.48P; SAM-APD; blue-green detector; breakdown voltage; dark current density; homo-junction separate absorption multiplication avalanche photodiode; narrow spectral response; optical spectrum; temperature 293 K to 298 K; wide band-gap; Absorption; Avalanche photodiodes; Detectors; Educational institutions; Electric fields; Gallium arsenide; Physics; Avalanche photodiode; blue detector; narrow band detector; optical communication;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2014.2316601

Filename

6797918

Al In P SAM-APD as a Blue-Green Detector

Jeng Shiuh Cheong ; Ong, J.S.L. ; Jo Shien Ng ; Krysa, A.B. ; David, J.P.R.

jour

Al $_{\\bf 0.52}$ In $_{\\bf 0.48}$ P SAM-APD as a Blue-Green Detector