Title :
Advantages of InGaAsP separate confinement layer in 0.98 mu m InGaAs/GaAs/InGaP strained DOW lasers for high power operation at high temperature
Author :
Sagawa, M. ; Hiramoto, K. ; Tsuchiya, T. ; Tsuji, S. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
The advantages of 0.98 mu m InGaAs/GaAs/InGaP lasers with an InGaAsP SCH layer were investigated by comparing them with identical lasers with a conventional GaAs SCH layer. A higher internal quantum efficiency of 0.817 and low internal loss of 2.11 cm-1 were obtained due to the large conduction band discontinuity. Moreover, high power operation of 80 mW from an uncoated facet was obtained up to 70 degrees C with the laser with the InGaAsP SCH layer.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; 0.98 micron; 70 degC; 80 mW; InGaAs-GaAs-InGaP lasers; InGaAsP separate confinement layer; SCH layer; conduction band discontinuity; high power operation; high temperature; internal loss; internal quantum efficiency; strained DOW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921043
