Title :
A drift-diffusion/Monte Carlo simulation methodology for Si1-x Gex HBT design
Author :
Palestri, Pierpaolo ; Mastrapasqua, Marco ; Pacelli, Andrea ; King, Clifford A.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
fDate :
7/1/2002 12:00:00 AM
Abstract :
An accurate and efficient simulation methodology for Si1-x Gex HBTs is presented. A two-dimensional (2-D) drift-diffusion solver is employed for dc and ac characteristics, and one-dimensional (1-D) full-band Monte Carlo for transport in the base-collector high-electric-field region. Extrinsic parasitics are introduced as lumped circuit elements whose values are obtained from measurements and layout considerations. This approach not only reduces the computational cost of the simulation, but it also helps to differentiate the relevance of the intrinsic and extrinsic device parameters. We discuss the calibration of the simulation on a 0.25 μm process and use a 1-D regional analysis in the quasi-static approximation to identify the major source of delay. Results of the delay analysis were used to improve device performance for the 0.16 μm technology node
Keywords :
Ge-Si alloys; Monte Carlo methods; delays; diffusion; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; 0.16 micron; 0.25 micron; 1D regional analysis; HBT; Si1-xGex; base-collector high-electric-field region; computational cost; delay analysis; drift-diffusion solver; drift-diffusion/Monte Carlo simulation methodology; extrinsic parasitics; full-band Monte Carlo; intrinsic device parameters; layout considerations; lumped circuit elements; quasi-static approximation; Analytical models; Calibration; Circuit simulation; Computational efficiency; Computational modeling; Delay; Heterojunction bipolar transistors; Monte Carlo methods; Performance analysis; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013282
