Title :
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory
Author :
Jungemann, Christoph ; Neinhüs, Burkhard ; Meinerzhagen, Bernd
Author_Institution :
Bremen Univ., Germany
fDate :
7/1/2002 12:00:00 AM
Abstract :
Langevin-type two-dimensional (2-D) bipolar drift-diffusion (DD) and hydrodynamic (HD) noise models are presented for Si and SiGe devices, which are based on the new concept of modified Langevin forces, which ensure that the DD and HD models exactly reproduce the fluctuations of the full-band Monte Carlo (MC) model under homogeneous bulk conditions. All transport and noise parameters are generated by MC bulk simulations and stored in lookup tables, which must be built only once. As a consequence, the accuracy of the DD and HD models is improved without an increase in CPU time compared to models with analytical expressions for the parameters. Considering the full-band structure, a remarkably strong dependence of noise on crystal orientation is found
Keywords :
Boltzmann equation; Ge-Si alloys; Monte Carlo methods; Poisson equation; current fluctuations; elemental semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; silicon; technology CAD (electronics); CPU time; HBT; Langevin-Boltzmann equation; Langevin-type two-dimensional models; Poisson equation; Si; SiGe; bipolar drift-diffusion noise models; bulk simulations; crystal orientation dependence; device simulation; full-band Monte Carlo model fluctuations; homogeneous bulk conditions; hydrodynamic noise models; lookup tables; modified Langevin forces; momentum-based models; multiterminal devices; technology computer aided design; Analytical models; Fluctuations; Germanium silicon alloys; High definition video; Hydrodynamics; Monte Carlo methods; Noise generators; Silicon germanium; Table lookup; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013283
