• DocumentCode
    772332
  • Title

    A new look at the antenna effect

  • Author

    Verret, Doug P. ; Krishnan, Anand ; Krishnan, Srikanth

  • Author_Institution
    Texas Instrum. Inc., Houston, TX, USA
  • Volume
    49
  • Issue
    7
  • fYear
    2002
  • fDate
    7/1/2002 12:00:00 AM
  • Firstpage
    1274
  • Lastpage
    1282
  • Abstract
    It is a widely held belief that plasma process-induced damage (PID) is caused, among other things, by plasma nonuniformities. These nonuniformities are caused by either nonoptimum reactor design and operation or nonflat wafer topography, the latter giving rise to electron shading that selectively inhibits one charge specie over another causing local surface charging. This charging builds over many cycles. While these phenomena are of serious concern, it is the object of this work to point out that there is an additional way to conceptualize the mechanism for PID in ac glow discharges. In this model, it is proposed that the net charge flux in each power supply half cycle is enough to induce a surface potential of sufficient magnitude to damage thin dielectrics. Semiquantitative arguments are made that outline how this mechanism is capable, in principle, of explaining a wide range of published empirical data. Notable among these predictions is that plasma PID can depend upon the size and shape of the antenna, behaves as though the stress were from a current source, and is only proportional to antenna ratio (AR) under special circumstances
  • Keywords
    glow discharges; plasma materials processing; surface charging; surface potential; surface topography; surface treatment; ac glow discharges; antenna effect; antenna ratio; current source; electron shading; local surface charging; net charge flux; nonflat wafer topography; nonoptimum reactor design; plasma nonuniformities; plasma process-induced damage; surface potential; thin dielectrics; Dielectrics; Electrons; Glow discharges; Inductors; Plasma sources; Power supplies; Shape; Surface charging; Surface discharges; Surface topography;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.1013286
  • Filename
    1013286