Title :
SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250°C
Author :
Dessard, Vincent ; Iñíguez, Benjamin ; Adriaensen, Stéphane ; Flandre, Denis
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fDate :
7/1/2002 12:00:00 AM
Abstract :
This paper deals with SOI n-MOSFET low-frequency noise measurements, analysis, and modeling from room temperature up to 250°C. We observed the occurrence of a Lorentzian-like noise component depending on bias and temperature conditions. An engineering Lorentzian model has been validated and used in order to determine the SOI floating body effect related noise, continuously from fully- to partially-depleted regimes. General considerations about low-noise high-temperature analog circuits are discussed
Keywords :
1/f noise; MOS analogue integrated circuits; MOSFET; Poisson equation; high-temperature electronics; semiconductor device models; semiconductor device noise; shot noise; silicon-on-insulator; white noise; 1/f noise; 20 to 250 C; Lorentzian-like noise component; Poisson equation; SOI n-MOSFET; bias conditions; engineering Lorentzian model; floating body continuous model; floating body effect related noise; fully-depleted regimes; low-frequency noise measurements; low-noise high-temperature analog circuits; noise modeling; partially-depleted regimes; power spectral density; shot noise; temperature conditions; white noise; Analog circuits; Circuit noise; Crosstalk; Low-frequency noise; MOSFET circuits; Noise level; Noise measurement; Silicon on insulator technology; Temperature dependence; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013288
