Title :
8 channel InGaAs/InP quantum well asymmetric Fabry-Perot modulator hybridised with foundry VLSI silicon CMOS drive circuits
Author :
Moseley, A.J. ; Kearley, M.Q. ; Goodwin, M.J. ; Robbins, D.J. ; Thompson, John ; Wood, A.K. ; Carr, N. ; Maung, N. ; Clewitt, D.
Author_Institution :
GEC Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
The fabrication and performance of 8 element arrays of asymmetric Fabry-Perot reflective modulators in the InGaAsP material system driven directly from silicon VLSI circuits are reported. These arrays were solder bond hybridised onto CMOS driver circuits for chip level optical interconnect, and have demonstrated contrast ratios of 4.8 dB and reflectivity changes of 22% when driven directly from the CMOS circuit.
Keywords :
CMOS integrated circuits; III-V semiconductors; driver circuits; electro-optical devices; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; optical modulation; semiconductor quantum wells; CMOS drive circuits; InGaAs-InP; InGaAsP material system; Si; chip level optical interconnect; eight channel type; foundry VLSI;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921055
