Title :
Estimating lateral straggling of indium implanted into crystalline silicon
Author :
Suzuki, Kunihiro ; Sudo, Ritsuo ; Tashiro, Hiroko
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
7/1/2002 12:00:00 AM
Abstract :
Previously, we developed an analytical model for tilt-dependent ion implantation profiles. We applied our model to systematic experimental indium ion implantation profiles using various tilt angles and established a corresponding database. Our database enables us to generate robust indium ion implantation profiles, even using high tilt angles
Keywords :
channelling; doping profiles; elemental semiconductors; indium; ion implantation; secondary ion mass spectra; semiconductor process modelling; silicon; SIMS; Si:In; analytical model; channeling component; indium ion implantation profiles; lateral straggling; model Pearson functions; normalized Gaussian functions; pocket ion implantations; process simulator; shrunken profile; tilt-dependent profiles; two-dimensional ion implantation profiles; Analytical models; Crystallization; Data mining; Databases; Indium; Ion implantation; Mass spectroscopy; Robustness; Silicon; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013292
