Title :
An analytical model for flat-band polysilicon quantization in MOS devices
Author :
Spinelli, Alessandro S. ; Clerc, Raphael ; Ghibaudo, Gerard
fDate :
7/1/2002 12:00:00 AM
Abstract :
A simple, physically based analytical model for carrier quantization at flat bands is presented and applied to the case of gate polysilicon quantization. Results for the reduction in the gate capacitance and threshold voltage shift are in good agreement with numerical simulations
Keywords :
MOSFET; capacitance; elemental semiconductors; quantisation (quantum theory); semiconductor device models; silicon; MOS devices; Si; analytical model; carrier quantization; flat-band polysilicon quantization; gate capacitance; numerical simulations; short-channel effects; threshold voltage shift; Analytical models; Capacitance; Carrier confinement; Doping; MOS devices; Numerical simulation; Physics; Quantization; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1013293
