Title :
Total Ionizing Dose Effects on Data Retention Capabilities of Battery-Backed CMOS SRAM
Author :
Nair, Dhruv ; Gale, R. ; Karp, Tanja
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA
Abstract :
Data retention capabilities of commercial battery-backed static random access memories (SRAMs) exposed to different ionizing dose are investigated. Pattern imprinting is observed for devices exposed to a total dose of 50 kR and above. Room temperature annealing and recovery is also recorded. A model for the pattern imprinting behavior in SRAMs is presented based on the general understanding of defects produced in MOSFETs due to ionizing radiation.
Keywords :
MOSFET circuits; SRAM chips; annealing; logic design; radiation effects; MOSFET; battery-backed CMOS SRAM; battery-backed static random access memories; data retention; ionizing radiation; pattern imprinting; room temperature annealing; total ionizing dose effects; Annealing; CMOS integrated circuits; Memory management; Radiation effects; Random access memory; Transistors; Writing; Interface traps; oxide traps; pattern imprint; radiation effects; static random access memories (SRAMs); total ionizing dose effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2258039
