Title :
Broad-band SiGe MMICs for phased-array radar applications
Author :
Tayrani, Reza ; Teshiba, Mary A. ; Sakamoto, Glenn M. ; Chaudhry, Q. ; Alidio, R. ; Kang, Yoosin ; Ahmad, Imad S. ; Cisco, Terry C. ; Hauhe, M.
Author_Institution :
Raytheon Space & Airborne Syst., El Segundo, CA, USA
Abstract :
This paper reports the performances of several broad-band monolithic SiGe monolithic microwave integrated circuits (MMICs) suitable for phased-array radar applications. The amplitude and phase control MMIC designs are based on an optimized SiGe p-i-n diode offered by the IBM 5HP SiGe foundry process. Utilizing this diode, several control circuitries including a broad-band (1-20-GHz) monolithic single-pole double-throw switch, a five-port transfer switch, a 6-bit phase shifter, and a 5-bit attenuator, all operating over 7-11 GHz, are designed. Also, the design and performance of an SiGe heterojunction bipolar transistor variable-gain cascode amplifier that combines the functionality of an amplifier and an attenuator into one MMIC is described.
Keywords :
Ge-Si alloys; bipolar MMIC; p-i-n diodes; phased array radar; 1 to 20 GHz; 5 bit; 6 bit; 7 to 11 GHz; IBM 5HP foundry process; SiGe; amplitude control MMIC designs; five-port transfer switch; p-i-n diode; phase control MMIC designs; phased-array radar applications; single-pole double-throw switch; variable-gain cascode amplifier; Application specific integrated circuits; Attenuators; Germanium silicon alloys; MMICs; Microwave integrated circuits; P-i-n diodes; Radar applications; Silicon germanium; Switches; Switching circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.815933
