Title :
Thermal and reverse base current effects on heterojunction bipolar transistors and circuits
Author :
Yuan, Jiann-shiun
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the collector-emitter offset voltage. It is shown that self-heating has implications for the cutoff frequency of the HBT, for the frequency response of a small-signal amplifier, and also for the thermal stability of a current mirror circuit
Keywords :
bipolar analogue integrated circuits; circuit analysis computing; circuit stability; frequency response; heterojunction bipolar transistors; impact ionisation; integrated circuit reliability; semiconductor device models; semiconductor device reliability; Gummel-Poon equations; base current reversal; collector-emitter offset voltage; current mirror circuit; cutoff frequency; device self-heating; empirical model; frequency response; heterojunction bipolar transistors; reverse base current effects; small-signal amplifier; thermal stability; Circuit simulation; Cutoff frequency; Equations; Frequency response; Gallium arsenide; Heating; Heterojunction bipolar transistors; Integrated circuit modeling; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
