DocumentCode
772561
Title
Effect of phonon scattering on intrinsic delay and cutoff frequency of carbon nanotube FETs
Author
Yoon, Youngki ; Ouyang, Yijian ; Guo, Jing
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
Volume
53
Issue
10
fYear
2006
Firstpage
2467
Lastpage
2470
Abstract
The effect of phonon scattering on the intrinsic delay and cutoff frequency of Schottky-barrier carbon nanotube (CNT) FETs (CNTFETs) is examined. Carriers are mostly scattered by optical and zone-boundary phonons beyond the beginning of the channel. It is shown that the scattering has a small direct effect on the dc on current of the CNTFET, but it results in a significant decrease of intrinsic cutoff frequency and increase of intrinsic delay
Keywords
Schottky barriers; Schottky gate field effect transistors; carbon nanotubes; carrier density; nanotube devices; phonons; Schottky barrier; carbon nanotube FET; cutoff frequency; intrinsic delay; phonon scattering; Acoustic scattering; Coaxial components; Computational modeling; Cutoff frequency; Delay effects; FETs; Nanotubes; Optical scattering; Phonons; Radio frequency; Carbon nanotubes (CNT); high-frequency performance; intrinsic delay; transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2006.882034
Filename
1705096
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