Title :
Product applications and technology directions with SiGe BiCMOS
Author :
Joseph, Alvin J. ; Dunn, James ; Freeman, Greg ; Harame, David L. ; Coolbaugh, Doug ; Groves, Rob ; Stein, Kenneth J. ; Volant, Rich ; Subbanna, Seshadri ; Marangos, V.S. ; Onge, Stephen St ; Eshun, Ebenezer ; Cooper, P. ; Johnson, Jeffrey B. ; Rieh, Jae-
Author_Institution :
IBM Microelectron. Div., Essex Junction, VT, USA
Abstract :
In this paper, we highlight the effectiveness and flexibility of SiGe BiCMOS as a technology platform over a wide range of performance and applications. The bandgap-engineered SiGe heterojunction bipolar transistors (HBTs) continue to be the workhorse of the technology, while the CMOS offering is fully foundry compatible for maximizing IP sharing. Process customization is done to provide high-quality passives, which greatly enables fully integrated single-chip solutions. Product examples include 40-Gb/s (OC768) components using high-speed SiGe HBTs, power amplifiers compatible for cellular applications, integrated voltage-controlled oscillators, and very high-level mixed-signal integration. It is argued that such key enablements along with the lower cost and higher yields attainable by SiGe BiCMOS technologies will provide competitive solutions for the communication marketplace.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; heterojunction bipolar transistors; mixed analogue-digital integrated circuits; semiconductor materials; voltage-controlled oscillators; 40 Gbit/s; BiCMOS; HBTs; IP sharing; SiGe; cellular applications; integrated voltage-controlled oscillators; mixed-signal integration; process customization; product applications; technology directions; BiCMOS integrated circuits; CMOS technology; Costs; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Microelectronics; Silicon germanium; Space technology; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.815930
