Title :
Characterization of high performance inverted delta-modulation-doped (IDMD) GaAs/InGaAs pseudomorphic heterostructure FET´s
Author :
Hsu, Wei-Chou ; Wu, Chang-Luen ; Tsai, Ming-Shang ; Chang, Chun-Yen ; Liu, Wen-Chau ; Shieh, Hir-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
5/1/1995 12:00:00 AM
Abstract :
An inverted delta-modulation-doped (IDMD) GaAs/InGaAs pseudomorphic heterostructure grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is demonstrated and discussed. The respective influences of delta-doping period and spacer thickness on the sheet carrier densities and mobilities are investigated. For a 1.5×80 μm2 gate, a reverse leakage current smaller than 10 μA/mm (at -6.5 V), a drain-source breakdown voltage as high as 14.5 V, a maximum drain saturation current as high as 790 mA/mm, a maximum extrinsic transconductance as high as 250 mS/mm, a very broad gate voltage range of 3 V, and an electron saturation velocity up to 2.4×107 cm/s, are obtained at room temperature. A simple theoretical simulation on the IDMD structure is also compared with the experimental results
Keywords :
III-V semiconductors; carrier density; chemical vapour deposition; electric breakdown; field effect transistors; gallium arsenide; indium compounds; leakage currents; semiconductor doping; semiconductor growth; 14.5 V; GaAs-InGaAs; delta-doping period; drain-source breakdown voltage; electron saturation velocity; gate voltage range; inverted delta-modulation-doped; low-pressure metalorganic chemical vapor deposition; maximum drain saturation current; maximum extrinsic transconductance; pseudomorphic heterostructure FETs; reverse leakage current; sheet carrier densities; spacer thickness; Charge carrier density; Conducting materials; Doping profiles; Forward contracts; Gallium arsenide; Indium gallium arsenide; Leakage current; MOCVD; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
