Temperature dependence of breakdown voltages in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes

In this paper, we investigate temperature dependence of breakdown voltage V_br from -40 to 110°C in separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD´s) with a range of device parameters. The experimental data shows that V_br is approximately a linear function of temperature, with a temperature coefficient η_exp between 0.13 and 0.16 V/°C. A physical model is developed and it demonstrates that V_br indeed varies linearly with temperature with a temperature coefficient η_the about 0.155 V/°C. It also explains successfully the small variation of η_exp among the APD´s. Good agreement between the physical model predictions and experimental data of published InP-based APD´s is also obtained. This good agreement demonstrates that the proposed physical model is appropriate to model the temperature dependent characteristics in any InP-based APD´s