Monte-Carlo study of high-frequency, large-signal transport parameters for physics based device simulation

Author

Schroeder, Werner L. ; Wolff, Ingo

Author_Institution

Dept. of Electr. Eng., Duisburg Univ., Germany

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

819

Lastpage

827

Abstract

High-frequency large-signal electron transport properties are studied by Monte-Carlo simulation considering n-GaAs as a model problem. It is demonstrated that the use of steady-state transport parameters is inadequate for simulating device operation at microwave and millimeter wave frequencies. The error of the relaxation time approximation, as commonly used in physics based device modeling, is investigated and possible improvements are indicated. A novel effective large-signal mobility approximation is proposed for simplified transport models in the upper microwave and millimeter wave range

Keywords

Monte Carlo methods; approximation theory; carrier mobility; carrier relaxation time; microwave devices; millimetre wave devices; semiconductor device models; simulation; GaAs; Monte-Carlo simulation; device modeling; effective large-signal mobility approximation; electron transport properties; high-frequency transport parameters; large-signal transport parameters; microwave frequencies; millimeter wave frequencies; n-type GaAs; physics based device simulation; relaxation time approximation error; steady-state transport parameters; transport models; Computational complexity; Computational modeling; Conducting materials; Electron mobility; Frequency; Hydrodynamics; Microwave devices; Millimeter wave devices; Physics; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381975

Filename

381975