Title :
High optical power nonlinear dynamic response of AlInAs/GaInAs MSM photodiode
Author :
Ashour, Iman S. ; Harari, Joseph ; Vilcot, Jean-Pierre ; Decoster, Didier
Author_Institution :
Dept. Hyperfrequences et Semicond., Domaine Univ., France
fDate :
5/1/1995 12:00:00 AM
Abstract :
In this paper, we introduce a theoretical study and a numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of an MSM AlInAs/GaInAs photodiode under high-illumination conditions. We also report that, with an MSM operating at 20 GHz, we can expect a saturation limit at a maximum modulated optical power as high as 100 mW
Keywords :
III-V semiconductors; aluminium compounds; dynamic response; gallium arsenide; harmonic generation; indium compounds; metal-semiconductor-metal structures; numerical analysis; photodiodes; semiconductor device models; simulation; space charge; 100 mW; 20 GHz; AlInAs-GaInAs; MSM photodiode; harmonic-generation rate calculation; high optical power response; high-illumination conditions; nonlinear dynamic response; nonlinear electrical response; numerical simulation; saturation limit; Electrodes; Fiber nonlinear optics; High speed optical techniques; Nonlinear optics; Optical modulation; Optical receivers; Optical saturation; Photodetectors; Photodiodes; Schottky barriers;
Journal_Title :
Electron Devices, IEEE Transactions on
