Title :
40-GHz transimpedance amplifier with differential outputs using InP-InGaAs heterojunction bipolar transistors
Author :
Wu, Charles Q. ; Sovero, Emilio A. ; Massey, Bruce
Author_Institution :
Vitesse Semicond. Corp., Camarillo, CA, USA
Abstract :
High-gain and high-bandwidth transimpedance amplifiers (TIAs) are required for fiber-optic receiver modules. This paper reports on the design, fabrication, and characterization of a 40-Gb/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP-InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 Ω with -3-dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a standalone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer in short-reach applications.
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; differential amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; preamplifiers; 40 GHz; 40 Gbit/s; InP-InGaAs; InP-InGaAs single heterojunction bipolar transistor; SONET/SDH STS-768/STM-256; differential post-amplifier; fiber-optic receiver module; transimpedance amplifier IC; transimpedance pre-amplifier; Bandwidth; Circuits; Differential amplifiers; Heterojunction bipolar transistors; Indium phosphide; Optical amplifiers; Optical fiber communication; Optical receivers; Photodetectors; Silicon germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.815927
