A novel extraction technique for the effective channel length of MOSFET devices

Author

Li, Hsin-Hsien ; Wu, Ching-Yuan

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

856

Lastpage

863

Abstract

A novel method using the charge pumping technique for extracting the effective channel length of MOSFET devices is presented, in which the effective area approach is used and the edges of the area are defined clearly. It is shown that the extracted effective channel length is independent of the measuring biases and the proposed new method is simple, accurate, and reliable, as compared to those using the I-V method. With the knowledge of the device dopant profiles, the extracted channel length with 0.01 μm accuracy can be achieved. Moreover, the proposed method is applicable to either n- or p-channel, conventional or LDD, surface or buried channel MOSFET´s

Keywords

MOSFET; doping profiles; semiconductor device testing; LDD device; MOSFET devices; buried channel type; charge pumping technique; device dopant profiles; effective channel length; extraction technique; n-channel device; p-channel device; surface channel type; Bipolar transistors; Capacitance-voltage characteristics; Channel bank filters; Charge carrier processes; Charge pumps; Electron traps; Length measurement; MOSFET circuits; Parasitic capacitance; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381980

Filename

381980