Channel profile engineering for MOSFET´s with 100 nm channel lengths

Author

Jacobs, Jarvis B. ; Antoniadis, Dimitri

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

870

Lastpage

875

Abstract

The effective inversion electron mobility and several short-channel effects are examined for different channel doping profiles in NMOSFETs with L_eff near 100 nm using device simulators. For given threshold voltage, the effective mobility depends on the doping profile shape when the ionized dopant impurity scattering near the surface is nonnegligible as may be the case with the high doping required for proper scaling to L_eff⩽100 nm. In this regime, super-steep retrograde profiles result in higher effective mobility values than conventional step doping profiles while allowing deeper drain/source junctions

Keywords

MOSFET; doping profiles; electron mobility; semiconductor device models; semiconductor doping; simulation; 100 nm; MOSFET; NMOSFETs; channel doping profiles; channel profile engineering; device simulators; doping profile shape; effective inversion electron mobility; ionized dopant impurity scattering; short-channel effects; super-steep retrograde profiles; threshold voltage; Doping profiles; Electron mobility; Impurities; Jacobian matrices; MOSFET circuits; Scattering; Semiconductor process modeling; Shape; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381982

Filename

381982