A highly integrated dual-band triple-mode transmit IC for cellular CDMA2000 applications

Author

Aggarwal, Sudhir ; Daanen, Anton ; Locher, Matthias ; Landesman, Alan L. ; Judson, M. ; Garrigues, Fabien ; Bracey, Mark ; Xu, Haiming ; Charlon, Olivier ; Gao, Minzhan

Author_Institution

Philips Semicond., San Jose, CA, USA

Volume

38

Issue

9

fYear

2003

Firstpage

1561

Lastpage

1569

Abstract

A highly integrated transmit integrated circuit intended for dual-band (CELL/PCS) and triple-mode (CDMA/TDMA/AMPS) cellular mobile stations is presented. It features a linear-in-dB gain-control range of 90 dB and provides a high output power of 9 dBm (PCS band) while meeting linearity requirements (-53-dBc ACPR) and achieving the receive-band noise floor of -133 dBm/Hz. It consumes only 130-mA current (3-V supply) in the PCS band. A dynamic-biasing feature results in additional power savings at lower signal levels. The circuit is fabricated in a 30-GHz f_T BiCMOS technology.

Keywords

3G mobile communication; BiCMOS integrated circuits; UHF integrated circuits; cellular radio; code division multiple access; radio transmitters; 130 mA; 3 V; 30 GHz; 30-GHz BiCMOS technology; PCS band; analog mobile phone service; cellular CDMA2000 applications; dual-band cellular mobile stations; dual-band radio; dynamic-biasing feature; high output power; highly integrated dual-band triple-mode transmit IC; linear-in-dB gain-control range; linearity requirements; multimode radio; power savings; receive-band noise floor; triple-mode cellular mobile stations; Application specific integrated circuits; BiCMOS integrated circuits; Current supplies; Dual band; Integrated circuit noise; Linearity; Multiaccess communication; Personal communication networks; Power generation; Time division multiple access;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2003.815916

Filename

1225800