Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects

Author

Apanovich, Y. ; Blakey, P. ; Cottle, R. ; Lyumkis, E. ; Polsky, B. ; Shur, A. ; Tcherniaev, A.

Author_Institution

Silvaco Int., Santa Clara, CA, USA

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

890

Lastpage

898

Abstract

Stratton´s energy balance model for nonlocal charge transport in semiconductors is extended to include the effects of heterojunctions and lattice heating. The extended model is implemented in a general purpose 2D device simulator. Calculated results are presented for three device types and each of four models. The devices are a silicon BJT, a silicon SOI transistor, and a GaAs/AlGaAs HBT. The models are isothermal drift-diffusion, nonisothermal drift-diffusion, isothermal energy balance, and nonisothermal energy balance. Analysis of these results provides detailed insights into the impact of the coupling between carrier transport and lattice heating

Keywords

MOSFET; bipolar transistors; carrier mobility; diffusion; semiconductor device models; semiconductor heterojunctions; silicon-on-insulator; 2D device simulator; BJT; GaAs-AlGaAs; HBT; SOI transistor; Si; Stratton´s energy balance model; carrier transport; coupled nonlocal transport; heterojunctions; isothermal drift-diffusion; isothermal energy balance; lattice heating; nonisothermal drift-diffusion; nonisothermal effects; nonisothermal energy balance; numerical simulation; submicrometer devices; Heating; Helium; Heterojunctions; Ice; Isothermal processes; Lattices; Modems; Numerical simulation; Silicon; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.381985

Filename

381985