Title :
Electrical properties and reliability of MOSFET´s with rapid thermal NO-nitrided SiO2 gate dielectrics
Author :
Bhat, Mousumi ; Wristers, Dirk J. ; Han, Liang-Kai ; Yan, Jiang ; Fulford, H. Jim ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
This paper reports on the performance and hot carrier reliability of N- and P-channel MOSFET´s with oxynitride gate dielectrics fabricated by rapid thermal nitridation (RTN) of thermally grown SiO2 in pure nitric oxide (NO) ambient. It is found that current drivability of N-channel MOSFET´s increases with NO-nitridation of SiO2. A significant enhancement in high field electron mobility is also observed with increasing NO-nitridation. P-channel MOSFET´s with NO-nitrided SiO 2 gates show somewhat lower current drivability and hole mobility compared to SiO2 for both low- and high-Vg. Both N- and P-channel MOSFET´s with NO-nitrided oxides show excellent immunity to channel hot carrier degradation. The improvement in hot-carrier reliability is attributed to the efficient incorporation of nitrogen in the dielectric through NO-nitridation. A 1000°C, short 10-second NO-anneal was found to be the optimum nitridation condition since, compared to control oxide devices, these devices showed comparable electron and hole mobility but significantly enhanced hot-carrier immunity
Keywords :
MOSFET; carrier mobility; hot carriers; nitridation; rapid thermal processing; semiconductor device reliability; 10 sec; 1000 degC; MOSFETs; NO; SiO2; channel hot carrier degradation; current drivability; electrical properties; high field electron mobility; hole mobility; hot carrier reliability; oxynitride gate dielectrics; rapid thermal nitridation; Charge carrier processes; Costs; Dielectrics; Electron mobility; Furnaces; Hot carriers; MOSFET circuits; Nitrogen; Senior members; Thermal degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
