• DocumentCode
    772760
  • Title

    Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT´s

  • Author

    Wei, A. ; Kosier, S.L. ; Schrimpf, R.D. ; Combs, W.E. ; DeLaus, M.

  • Author_Institution
    Microsystems Technol. Lab., MIT, Cambridge, MA, USA
  • Volume
    42
  • Issue
    5
  • fYear
    1995
  • fDate
    5/1/1995 12:00:00 AM
  • Firstpage
    923
  • Lastpage
    927
  • Abstract
    Excess collector current in irradiated NPN BJT´s is linked to an oxide-trapped-charge-induced inversion layer acting as an additional emitter. Excess collector current is modeled by interpreting the inversion layer as an extension of the emitter
  • Keywords
    bipolar transistors; inversion layers; radiation effects; semiconductor device models; additional emitter; excess collector current; inversion layer; irradiated NPN BJTs; oxide-trapped-charge-induced emitter; Associate members; Automatic logic units; Contracts; Current measurement; Degradation; Gain measurement; Helium; Ionizing radiation; Laboratories; Nuclear electronics;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.381989
  • Filename
    381989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=772760