DocumentCode :
772768
Title :
Influence of material parameters on acoustic wave propagation modes in ZnO/Si bi-layered structures
Author :
Gao, Hui-dong ; Zhang, Shu-yi ; Qi, Xue ; Wasa, Kiyotaka ; Wu, Hao-dong
Author_Institution :
Lab. of Modern Acoust., Nanjing Univ., China
Volume :
52
Issue :
12
fYear :
2005
Firstpage :
2361
Lastpage :
2369
Abstract :
The influences of material properties on acoustic wave propagation modes in ZnO/Si bi-layered structures are studied. The transfer matrix method is used to calculate dispersion relations, wave field distributions, and electromechanical coupling coefficients of acoustic wave propagation modes in ZnO/Si bi-layered systems, in which the thickness of the substrate is of the same order of magnitude as the wavelength of the propagating wave modes. The influences of the thin film parameters on the acoustic wave propagation modes and their electromechanical coupling coefficients of the wave modes also are obtained. In addition, some experimental results for characterizing the wave propagation modes and their frequencies have also been obtained, which agree well with the theoretical predictions.
Keywords :
II-VI semiconductors; acoustic wave effects; elemental semiconductors; piezoelectric semiconductors; piezoelectric thin films; piezoelectricity; silicon; transfer function matrices; zinc compounds; Si; ZnO-Si; acoustic wave propagation modes; bilayered structures; dispersion relations; electromechanical coupling coefficients; transfer matrix method; wave field distributions; Acoustic materials; Acoustic propagation; Acoustic waves; Dispersion; Frequency; Micromechanical devices; Piezoelectric films; Substrates; Transistors; Zinc oxide; Acoustics; Computer Simulation; Computer-Aided Design; Equipment Design; Equipment Failure Analysis; Materials Testing; Models, Chemical; Radiation Dosage; Radiometry; Silicon; Transducers; Ultrasonography; Zinc Oxide;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2005.1563280
Filename :
1563280
Link To Document :
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