Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier

Author

Liu, Yueran ; Dey, Sagnik ; Tang, Shan ; Kelly, David Q. ; Sarkar, J. ; Banerjee, Sanjay K.

Author_Institution

Microelectron. Res. Center, Austin, TX

Volume

53

Issue

10

fYear

2006

Firstpage

2598

Lastpage

2602

Abstract

The authors have fabricated a nonvolatile flash-memory device using SiGe nanocrystal floating gate with new variable oxide thickness (VARIOT) tunnel barrier. It is found that the writing speed of VARIOT sample is almost hundred times faster at a low programming voltage of 5-8 V compared to the traditional flash memory with single-layer tunnel barrier. The results have shown that a long-charge retention time of up to 10⁶ s and a good endurance characteristics of up to 10⁶ write/erase cycles can be achieved at 85 degC

Keywords

Ge-Si alloys; flash memories; nanostructured materials; semiconductor quantum dots; tunnelling; 5 to 8 V; 85 C; SiGe; nanocrystal floating gate; nanocrystal memory; nonvolatile flash-memory device; semiconductor quantum dots; variable oxide thickness tunnel barrier; Argon; Dielectric substrates; Flash memory; Germanium silicon alloys; Hafnium oxide; Nanocrystals; Nonvolatile memory; Quantum dots; Silicon germanium; Voltage; Flash memory; semiconductor quantum dots; variable oxide thickness (VARIOT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.882395

Filename

1705115