Title :
Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier
Author :
Liu, Yueran ; Dey, Sagnik ; Tang, Shan ; Kelly, David Q. ; Sarkar, J. ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Austin, TX
Abstract :
The authors have fabricated a nonvolatile flash-memory device using SiGe nanocrystal floating gate with new variable oxide thickness (VARIOT) tunnel barrier. It is found that the writing speed of VARIOT sample is almost hundred times faster at a low programming voltage of 5-8 V compared to the traditional flash memory with single-layer tunnel barrier. The results have shown that a long-charge retention time of up to 106 s and a good endurance characteristics of up to 106 write/erase cycles can be achieved at 85 degC
Keywords :
Ge-Si alloys; flash memories; nanostructured materials; semiconductor quantum dots; tunnelling; 5 to 8 V; 85 C; SiGe; nanocrystal floating gate; nanocrystal memory; nonvolatile flash-memory device; semiconductor quantum dots; variable oxide thickness tunnel barrier; Argon; Dielectric substrates; Flash memory; Germanium silicon alloys; Hafnium oxide; Nanocrystals; Nonvolatile memory; Quantum dots; Silicon germanium; Voltage; Flash memory; semiconductor quantum dots; variable oxide thickness (VARIOT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.882395
