THz frequency conversion in injection locked semiconductor laser oscillators

Author

Bava, G.P. ; Debernardi, P. ; Osella, G.

Author_Institution

Dipartimento di Elettronica, Politecnico di Torino, Italy

Volume

143

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

41

Lastpage

48

Abstract

A complete model for evaluating frequency conversion due to highly nondegenerate four-wave mixing in injection locked Fabry-Perot laser oscillators is presented which takes account of carrier density fluctuations, very fast phenomena and propagation effects. Simplified analytical solutions are obtained in the mean field limit; they are particularly useful for stability analysis and lead to simple expressions that characterise the conversion spectra. Agreement with the results of the distributed model is very satisfactory. Numerical results show good conversion gain up to the terahertz region and a complex behaviour of the frequency response near side resonances; in particular, controlled injection locking allows a wideband response to be achieved

Keywords

Fabry-Perot resonators; injection locked oscillators; laser cavity resonators; laser mode locking; laser stability; multiwave mixing; optical frequency conversion; semiconductor lasers; Fabry-Perot laser oscillators; THz frequency conversion; analytical solutions; carrier density fluctuations; controlled injection locking; conversion gain; conversion spectra; distributed model; frequency conversion; frequency response; injection locked semiconductor laser oscillators; mean field limit; nondegenerate four-wave mixing; propagation effects; side resonances; stability analysis; terahertz region; very fast phenomena; wideband response;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19960135

Filename

487674