Title :
THz frequency conversion in injection locked semiconductor laser oscillators
Author :
Bava, G.P. ; Debernardi, P. ; Osella, G.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
fDate :
2/1/1996 12:00:00 AM
Abstract :
A complete model for evaluating frequency conversion due to highly nondegenerate four-wave mixing in injection locked Fabry-Perot laser oscillators is presented which takes account of carrier density fluctuations, very fast phenomena and propagation effects. Simplified analytical solutions are obtained in the mean field limit; they are particularly useful for stability analysis and lead to simple expressions that characterise the conversion spectra. Agreement with the results of the distributed model is very satisfactory. Numerical results show good conversion gain up to the terahertz region and a complex behaviour of the frequency response near side resonances; in particular, controlled injection locking allows a wideband response to be achieved
Keywords :
Fabry-Perot resonators; injection locked oscillators; laser cavity resonators; laser mode locking; laser stability; multiwave mixing; optical frequency conversion; semiconductor lasers; Fabry-Perot laser oscillators; THz frequency conversion; analytical solutions; carrier density fluctuations; controlled injection locking; conversion gain; conversion spectra; distributed model; frequency conversion; frequency response; injection locked semiconductor laser oscillators; mean field limit; nondegenerate four-wave mixing; propagation effects; side resonances; stability analysis; terahertz region; very fast phenomena; wideband response;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19960135
