Influence of contacts on the hold-off voltage and recovery of electron-beam activated gallium arsenide switches

Author

Kennedy, M.K. ; Brinkmann, R.P. ; Schoenbach, K.H.

Author_Institution

Phys. Electron. Res. Inst., Old Dominion Univ., Norfolk, VA, USA

Volume

42

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

1009

Lastpage

1011

Abstract

The dark current, the current gain, and the recovery behavior of electron-beam controlled gallium arsenide bulk switches was measured for various contact configurations. With non-injecting contacts, the pulsed hold-off voltage and the threshold voltage for current lock-on was found to be higher by more than a factor of 3, compared to systems with injecting contacts. Additionally, the switch gain could be increased by a factor of 3 by doping the electron-beam irradiated face of the switch with zinc

Keywords

III-V semiconductors; electron beam applications; gallium arsenide; semiconductor switches; GaAs; bulk switches; contact configurations; current gain; dark current; electron-beam activated switches; electron-beam irradiated face; hold-off voltage; noninjecting contacts; recovery; switch gain; threshold voltage; Contacts; Gallium arsenide; High speed optical techniques; Laser radar; Optical pulse generation; Optical pulse shaping; Optical switches; Power semiconductor switches; Semiconductor lasers; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.382002

Filename

382002