DocumentCode
772947
Title
Validity range estimate of the asymptotic expansion approach for the modeling of minority-carrier injection into heavily doped emitters
Author
Rinaldi, Niccoòlb
Author_Institution
Dept. of Eelctron. Eng., Naples Univ., Italy
Volume
42
Issue
5
fYear
1995
fDate
5/1/1995 12:00:00 AM
Firstpage
1011
Lastpage
1013
Abstract
A detailed analysis of the accuracy of the asymptotic expansion approach is carried out. A simple methodology for an accurate evaluation of the validity range of the approximate expressions for the calculation of the current injected into heavily doped semiconductor regions is presented. The validity range can be set as a function of the desired accuracy
Keywords
bipolar transistors; heavily doped semiconductors; minority carriers; semiconductor device models; asymptotic expansion approach; bipolar transistors; heavily doped emitters; minority-carrier injection; modeling; validity range; Analytical models; Councils; Current density; Doping profiles; Microelectronics; Polynomials; Shape; Taylor series; Testing;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.382003
Filename
382003
Link To Document