Title :
The sublinear relationship between index change and carrier density in 1.5 and 1.3 mu m semiconductor lasers
Author :
Shin, S. ; Su, C.B.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
The carrier-induced index change was measured using a novel injection-reflection technique in combination with differential carrier lifetime data. The observed relation between index change and injected carrier density at bandgap wavelength is nonlinear and is approximately given by delta n/sub act/=-6.1*10/sup -14/ (N)/sup 0.66/ for a 1.5- mu m laser and delta n/sub act/=-1.3*10/sup -14/ (N)/sup 0.68/ for a 1.3- mu m laser. The carrier-induced index change for a 1.3- mu m laser at 1.53- mu m wavelength is smaller and is given by delta n/sub act/=-9.2*10/sup -16/ (N)/sup 0.72/.<>
Keywords :
carrier density; refractive index; semiconductor junction lasers; 1.3 micron; 1.5 micron; 1.53 micron; IR sources; bandgap wavelength; carrier-induced index change; differential carrier lifetime data; diode lasers; injected carrier density; injection-reflection technique; nonlinear; reflectometry; semiconductor lasers; sublinear relationship; Charge carrier density; Distributed feedback devices; Laser excitation; Laser feedback; Laser modes; Laser theory; Laser transitions; Pump lasers; Semiconductor lasers; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
