Wavelength dependence of noise figure in InGaAs/InGaAsP multiple-quantum-well laser amplifier

Author

Jepsen, K.S. ; Mikkelsen, B. ; Povlsen, J.H. ; Yamaguchi, M. ; Stubkjaer, K.E.

Author_Institution

Electromagn. Inst., Tech. Univ. of Denmark, Lyngby, Denmark

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

550

Lastpage

553

Abstract

Theoretical and experimental results are presented for the wavelength dependence of the noise figure and the single-pass gain in multiquantum well amplifiers. The theoretical model accounts for both conduction band/heavy hole band and conduction band/light-hole band transitions. The calculations are in good agreement with the experimental results, which indicate that the noise figure has some dependence on the wavelength. A minimum traveling-wave amplifier (TWA) noise figure of 3.9 dB has been measured at 1550 nm for a single-pass of 22 dB.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 1550 nm; 22 dB; IR; InGaAs-InGaAsP; MQW; conduction band; heavy hole band; light-hole band transitions; minimum traveling-wave amplifier; multiple-quantum-well laser amplifier; noise figure; semiconductor laser diodes; single-pass gain; wavelength dependence; Electrons; Indium gallium arsenide; Laser noise; Noise figure; Optical amplifiers; Optical noise; Pump lasers; Quantum well devices; Semiconductor laser arrays; Solid lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141964

Filename

141964