High-speed photodetection in a reverse biased GaAs/AlGaAs GRINSCH SQW laser structure

Author

Moss, D. ; Landheer, D. ; Conn, D. ; Halliday, D. ; Charbonneau, S. ; Aers, G. ; Barber, R. ; Chatenoud, F.

Author_Institution

Solid State Optoelectron. Consortium, Nat. Res. Council, Ottawa, Ont., Canada

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

609

Lastpage

611

Abstract

The authors report extremely efficient ( approximately 100% internal quantum efficiency) and high-speed ( approximately 25-pS FWHM) photodetection in a reverse-biased GaAs/AlGaAs ridge waveguide single-quantum-well (SQW) graded-index separate confinement heterostructure (GRINSCH) laser structure near lambda =830 nm. The impulse response is limited by device parasitics to 25 pS at large reverse bias voltages, and by photogenerated electron escape closer to flatband conditions.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; high-speed optical techniques; infrared detectors; integrated optoelectronics; photodetectors; semiconductor junction lasers; 25 ps; 830 nm; GaAs-AlGaAs; III-V semiconductor; device parasitics; flatband conditions; graded-index separate confinement heterostructure; high speed photodetection; impulse response; internal quantum efficiency; large reverse bias voltages; photogenerated electron escape; reverse biased GaAs/AlGaAs GRINSCH SQW laser structure; ridge waveguide single-quantum-well; Electrons; Gallium arsenide; Molecular beam epitaxial growth; Optical devices; Optical waveguides; Photodetectors; Quantum well lasers; Sputter etching; Voltage; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141984

Filename

141984