Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth

Author

Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi

Author_Institution

Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

612

Lastpage

614

Abstract

The first monolithic integration of an AlGaAs/GaAs laser diode and a GaAs MESFET has been grown on an SiO/sub 2/ back-coated Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The selectively regrown GaAs MESFET, with a gate length of 2.5 mu m and gate width of 400 mu m, shows a good pinch-off characteristic, a transconductance of 88 mS/mm and a threshold voltage of -2.25 V. This is caused by using the SiO/sub 2/ back-coated Si substrate. The light output of the laser diode in the monolithically integrated device can be modulated by the MESFET.<>

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 2.5 micron; 400 micron; AlGaAs-GaAs; AlGaAs/GaAs MQW laser diode; GaAs MESFET; III-V semiconductor; Si; SiO/sub 2/ back-coated Si substrate; SiO/sub 2/-Si; gate length; gate width; good pinch-off characteristic; light output; metalorganic chemical vapor deposition; monolithic integration; selective regrowth; threshold voltage; transconductance; Chemical vapor deposition; Diode lasers; Gallium arsenide; MESFETs; MOCVD; Monolithic integrated circuits; Optical modulation; Quantum well devices; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141985

Filename

141985