Title :
Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
Author :
Woodward, T.K. ; Chirovsky, L.M.F. ; Lentine, A.L. ; D´Asaro, L.A. ; Laskowski, E.J. ; Focht, M. ; Guth, G. ; Pei, S.S. ; Ren, F. ; Przybylek, G.J. ; Smith, L.E. ; Leibenguth, R.E. ; Asom, M.T. ; Kopf, R.F. ; Kuo, J.M. ; Feuer, M.D.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
The authors experimentally demonstrate the operation of a fully integrated optoelectronic circuit with optical input and output consisting of a p-i-n photodetector and load resistor, a depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-effect transistor (HFET) and self-biased HFET load, together with an output GaAs-Al/sub x/Ga/sub 1-x/As multiple quantum-well optical modulator. All elements have been monolithically integrated within a 50- mu m*50- mu m area. A low optical power input causes a modulation of a higher-power output, demonstrating optical signal amplification.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical modulation; p-i-n diodes; photodetectors; photodiodes; 50 micron; GaAs-Al/sub x/Ga/sub 1-x/As; III-V semiconductor; depletion-mode GaAs-Al/sub x/Ga/sub 1-x/As heterostructure field-effect transistor; fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED; integrated optoelectronic circuit; load resistor; low optical power input; multiple quantum-well optical modulator; optical signal amplification; optically addressed integrated circuit; p-i-n photodetector; self-biased HFET load; Circuits; HEMTs; Integrated optics; Integrated optoelectronics; MODFETs; Optical modulation; PIN photodiodes; Photodetectors; Resistors; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
