Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications

Author

Mondry, M J. ; Babic, D.I. ; Bowers, J.E. ; Coldren, L.A.

Author_Institution

Dept. of Electr. Eng., California Univ., Santa Barbara, CA, USA

Volume

4

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

627

Lastpage

630

Abstract

Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al,Ga,In)As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.<>

Keywords

III-V semiconductors; X-ray diffraction examination of materials; aluminium compounds; gallium arsenide; indium compounds; infrared spectra of inorganic solids; luminescence of inorganic solids; molecular beam epitaxial growth; optical films; optical materials; photoluminescence; refractive index; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; (Al,Ga,In)As epilayers; (AlGaIn)As-InP; III-V semiconductor; InP; MBE grown bulk epilayers; design; double-crystal diffractometry; low-temperature photoluminescence; model coefficients; modulators; optical devices; optoelectronic applications; reflection spectroscopy technique; refractive index; short-period superlattices; single-oscillator dispersion model; waveguides; wavelength dependence; Diffraction; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical reflection; Optical waveguides; Photoluminescence; Refractive index; Spectroscopy; Superlattices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.141990

Filename

141990