DocumentCode :
773409
Title :
Modeling the microwave properties of superconductors
Author :
Ma, Jian-Guo ; Wolff, Ingo
Author_Institution :
Dept. of Electr. Eng., Duisburg Univ., Germany
Volume :
43
Issue :
5
fYear :
1995
fDate :
5/1/1995 12:00:00 AM
Firstpage :
1053
Lastpage :
1059
Abstract :
In this paper a macroscopic phenomenological model for the microwave properties of superconductors is presented. The model is based on the idea that there are two kinds of current carriers, and instead of the first London´s equation a new equation is derived. This model can be applied to both low- and high-temperature superconductors. Using this model, an expression for the microwave surface resistance is derived and the surface resistance versus frequency is calculated. The results show that the relation between resistance and frequency is not R32 as indicated by both BCS theory and London model, but Rsa, where a is between 1 and 2 (e.g. a=1.35) for thin film high-Tc superconductors YBa2Cu3O7-δ. The temperature dependence of Rs is simulated using the given model. These relations and the values of the surface resistance agree well with experimental results. A residual resistance may be interpreted from this model
Keywords :
barium compounds; high-frequency effects; high-temperature superconductors; superconducting thin films; surface conductivity; yttrium compounds; YBa2Cu3O7-δ; YBa2Cu3O7; current carriers; high-temperature superconductors; low-temperature superconductors; macroscopic phenomenological model; microwave properties; residual resistance; simulation; surface resistance; thin film superconductors; Electrical resistance measurement; Equations; Frequency dependence; High temperature superconductors; Superconducting materials; Superconducting microwave devices; Superconductivity; Surface resistance; Temperature dependence; Wires;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.382065
Filename :
382065
Link To Document :
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